INTERFACE ROUGHNESS SCATTERING IN INAS/ALSB QUANTUM-WELLS

被引：80

作者：

BOLOGNESI, CR

KROEMER, H

ENGLISH, JH

机构：

[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 02期

关键词：

D O I：

10.1063/1.108221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study of interface roughness scattering in not-intentionally-doped AlSb/InAs/AlSb quantum wells grown by molecular beam epitaxy on [001] GaAs semi-insulating substrates. The low-temperature mobility is found to be limited by interface roughness scattering for well widths below 100 angstrom. The measured mobilities are well accounted for by Gold's theoretical treatment [A. Gold, Phys. Rev. B 35, 723 (1987)], once it is suitably modified to account for the band nonparabolicity of InAs. The experimental electron density dependence of the mobility indicates a lateral correlation length for the interface roughness LAMBDA almost-equal-to 62 angstrom for interface fluctuations approximately 1 monolayer high. We believe this roughness scale is characteristic of the bottom (InAs-on-AlSb) interface.

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收藏

页码：213 / 215

页数：3

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