THE PROBLEM OF TWINNING IN NDGAO3 CZOCHRALSKI CRYSTALS

被引:17
作者
UECKER, R
REICHE, P
ALEX, V
DOERSCHEL, J
SCHALGE, R
机构
[1] Institute of Crystal Growth, D-12489 Berlin
关键词
D O I
10.1016/0022-0248(94)91285-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
NdGaO3 crystals are an excellent substrate material for epitaxial high-T(c) YBa2Cu3Ox (YBCO) films, but their application is restricted by their strong tendency towards twinning in the {112} and {110} planes. The mechanism of twinning was resolved. As a consequence, the formation of twins was reproducibly suppressed by the development of a modified growth technique.
引用
收藏
页码:278 / 282
页数:5
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