LOW-FREQUENCY IMPURITY CONDUCTION IN LIGHTLY DOPED N-TYPE GAAS

被引：8

作者：

KAHLERT, H

机构：

[1] UNIV VIENNA,INST ANGEW PHYS,KOPERNIKUSGASSE 15,A-1060 VIENNA,AUSTRIA

[2] LUDWIG BOLTZMANN INST FESTKORPER PHYS,A-1060 VIENNA,AUSTRIA

[3] UNIV WURZBURG,PHYS INST,WURZBURG,FED REP GER

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1976年 / 9卷 / 03期

关键词：

D O I：

10.1088/0022-3719/9/3/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：491 / 496

页数：6

共 13 条

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[6]

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[7] ROLE OF CONTACTS IN FREQUENCY-DEPENDENT CONDUCTION IN DISORDERED SOLIDS [J].

JONSCHER, AK .

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[8]

KAHLERT H, 1974, 12TH P INT C PHYS SE, P269

[9] LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J].

POLLAK, M ;

GEBALLE, TH .

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[10] STOCHASTIC TRANSPORT IN A DISORDERED SOLID .2. IMPURITY CONDUCTION [J].

SCHER, H ;

LAX, M .

PHYSICAL REVIEW B, 1973, 7 (10) :4502-4519

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