EPITAXIAL-GROWTH OF LITHIUM-NIOBATE THIN-FILMS FROM A SINGLE-SOURCE ORGANOMETALLIC PRECURSOR USING METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：74

作者：

WERNBERG, AA ^{[1
]}

GYSLING, HJ ^{[1
]}

FILO, AJ ^{[1
]}

BLANTON, TN ^{[1
]}

机构：

[1] EASTMAN KODAK CO,DIV ANALYT TECHNOL,ROCHESTER,NY 14650

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.108528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lithium niobate thin films were, deposited on (0001) sapphire using metalorganic chemical vapor deposition. An organometallic compound, formed by reaction of lithium dipivaloylmethanate and niobium(V) ethoxide, was used as a single-source precursor. The epitaxial nature of the films was established by x-ray diffraction and Rutherford backscattering analyses (RBS).

引用

页码：946 / 948

页数：3

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