G-FACTOR ANISOTROPY OF CONDUCTION ELECTRONS IN INSB - COMMENT

被引：8

作者：

CARDONA, M

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.34.7402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7402 / 7403

页数：2

共 9 条

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[3]

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[4] G-FACTOR ANISOTROPY OF CONDUCTION ELECTRONS IN INSB [J].

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[5]

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[7] VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS [J].

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[8] INTERBAND MAGNETO-ABSORPTION AND FARADAY ROTATION IN INSB [J].

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[9]

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