THE ELECTRONIC-STRUCTURE OF GALLIUM NITRIDE

被引：54

作者：

PALUMMO, M ^{[1
]}

BERTONI, CM ^{[1
]}

REINING, L ^{[1
]}

FINOCCHI, F ^{[1
]}

机构：

[1] UNIV PARIS 11,CTR EUROPEEN CALCUL ATOM & MOLEC,F-91405 ORSAY,FRANCE

来源：

PHYSICA B | 1993年 / 185卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90269-C

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of a density functional calculation on gallium nitride are given. We use norm-conserving pseudopotentials with sufficiently extended sets of plane waves to investigate the ground-state properties and the electronic band structure for the zincblende phase of GaN and compare them with the corresponding results for the wurtzite structure. A comparison with the outcomes of other calculations and with the existing experimental data is also given.

引用

页码：404 / 409

页数：6

共 23 条

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