FREE-CARRIER ABSORPTION IN QUASI-2-DIMENSIONAL SEMICONDUCTING STRUCTURES FOR NONPOLAR OPTICAL PHONON-SCATTERING

被引：15

作者：

KUBAKADDI, SS

MULIMANI, BG

机构：

来源：

关键词：

D O I：

10.1063/1.335745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3640 / 3642

页数：3

共 10 条

ADAMSKA, H ;

SPECTOR, HN .

[2]

DINGLE R, 1976, PHYSICS SEMICONDUCTO, P965

[3]

DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21

[4] INFRARED ABSORPTION BY CONDUCTION ELECTRONS IN GERMANIUM [J].

MEYER, HJG .

PHYSICAL REVIEW, 1958, 112 (02) :298-308

[5]

Nag B. R., 1980, SPRINGER SERIES SOLI, V11

RIDLEY, BK .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (28) :5899-5917

[7] ELECTRON MOBILITY IN GE, SI, AND GAP [J].

RODE, DL .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 53 (01) :245-+

SPECTOR, HN .

PHYSICAL REVIEW B, 1983, 28 (02) :971-976

[9] FREE-CARRIER ABSORPTION IN N-TYPE GAP [J].

WILEY, JD ;

DIDOMENI.M .

PHYSICAL REVIEW B, 1970, 1 (04) :1655-&

[10]

1984, SURF SCI, V142