LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE

被引：18

作者：

MISSOUS, M ^{[1
]}

SINGER, KE ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 11期

关键词：

D O I：

10.1063/1.98069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：694 / 695

页数：2

相关论文

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