LASER-RECRYSTALLIZED POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS WITH LOW LEAKAGE CURRENT AND HIGH SWITCHING RATIO

被引：20

作者：

SEKI, S

KOGURE, O

TSUJIYAMA, B

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 09期

关键词：

D O I：

10.1109/EDL.1987.26681

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：425 / 427

页数：3

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