INTERCONNECTION TECHNOLOGY FOR 3-DIMENSIONAL INTEGRATION

[1] Bonifield T., 1988, 1988 Symposium on VLSI Technology. Digest of Technical Papers, P101

[2] INVESTIGATION OF REACTIVELY SPUTTERED TIN FILMS FOR DIFFUSION-BARRIERS [J]. THIN SOLID FILMS, 1986, 136 (02) : 195 - 214

[3] MACHIDA K, 1987, 1987 S VLSI TECHN, P69

[4] Mitsuhashi K., 1988, 1988 Symposium on VLSI Technology. Digest of Technical Papers, P71

[5] MITSUHASHI K, 1988, 5TH INT WORKSH FUT E, P87

[6] MITSUHASHI K, 1987, 1ST P INT S ULSI SCI, P557

[7] MITSUHASHI K, 1988, 20TH INT C SOL STAT, P569

[8] Nishimura T., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P111, DOI 10.1109/IEDM.1987.191362

[9] OGAWA S, 1986, 1986 INT EL DEV M LO, P62

[10] OHTAKE K, 1986, 1986 INT EL DEV M LO, P148

[1] Bonifield T., 1988, 1988 Symposium on VLSI Technology. Digest of Technical Papers, P101

[2] INVESTIGATION OF REACTIVELY SPUTTERED TIN FILMS FOR DIFFUSION-BARRIERS [J]. THIN SOLID FILMS, 1986, 136 (02) : 195 - 214

[3] MACHIDA K, 1987, 1987 S VLSI TECHN, P69

[4] Mitsuhashi K., 1988, 1988 Symposium on VLSI Technology. Digest of Technical Papers, P71

[5] MITSUHASHI K, 1988, 5TH INT WORKSH FUT E, P87

[6] MITSUHASHI K, 1987, 1ST P INT S ULSI SCI, P557

[7] MITSUHASHI K, 1988, 20TH INT C SOL STAT, P569

[8] Nishimura T., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P111, DOI 10.1109/IEDM.1987.191362

[9] OGAWA S, 1986, 1986 INT EL DEV M LO, P62

[10] OHTAKE K, 1986, 1986 INT EL DEV M LO, P148