ADSORPTION GEOMETRY AND OVERLAYER MORPHOLOGY IN THE FORMATION OF INTERFACES BETWEEN METALS AND (110) III-V SURFACES

被引：12

作者：

STEVENS, K

SOONCKINDT, L

KAHN, A

机构：

[1] Department of Electrical Engineering, Princeton University, Laboratoire d'Etude des Surfaces Interfaces et Composants (UACNRSD07870), Universite des Sciences et Techniques du Languedoc Place Eugene Bataillon, Princeton, New Jersey, 08544, 34060, Montnellie

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.577004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Interfaces formed between metals (In, Ag) and cleaved (110) surfaces of III-V compound semiconductors (GaSb, GaAs) held at low temperature are studied with low-energy electron diffraction and electron energy-loss spectroscopy. We consider the unrelaxation of the semiconductor surface structure by the metal adatoms, the adsorption sites on the surface and their implications for semiconductor band bending. The results are discussed in light of recent scanning tunneling microscopy measurements on metal/semiconductor interfaces and tight binding calculations of preferential adsorption sites. © 1990, American Vacuum Society. All rights reserved.

引用

页码：2068 / 2073

页数：6

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