PHOTOELECTROCHEMICAL ETCHING OF ZNSE AND NONUNIFORM CHARGE FLOW IN SCHOTTKY BARRIERS

被引：37

作者：

TENNE, R ^{[1
]}

FLAISHER, H ^{[1
]}

TRIBOULET, R ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDES LAB,F-92190 MEUDON,FRANCE

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.29.5799

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5799 / 5804

页数：6

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