INTEGRATED PROCESSING OF AMORPHOUS AND MICROCRYSTALLINE SI THIN-FILM TRANSISTORS BY PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION

被引：14

作者：

LUCOVSKY, G

HE, SS

WILLIAMS, MJ

STEPHENS, D

机构：

[1] Department of Physics, Materials Science and Engineering, Electrical and Computer Engineering, North Carolina State University, Raleigh

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 25卷 / 2-4期

关键词：

D O I：

10.1016/0167-9317(94)90033-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin film transistors (TFTs) have been fabricated in an ultra-high vacuum compatible integrated processing system with on-line surface analysis diagnostics - Auger electron spectroscopy (AES) and reflection high energy electron diffraction (RHEED). This paper deals with TFTs that include dual-layer oxide-nitride dielectrics, and either hydrogenated amorphous and/or microcrystalline Si thin films for the channel, and source and drain regions. The emphasis is on the integrated processing of bottom-gate device structures, and on the way the electrical performance of the TFTs are correlated with the properties of the dielectric and semiconducting films, their included internal interfaces and the external exposed surfaces.

引用

页码：329 / 336

页数：8

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