STUDIES OF BURIED INTERFACES BY OPTICAL 2ND-HARMONIC GENERATION

被引：27

作者：

RASING, T

机构：

[1] Research Institute for Materials, Toernooiveld, Nijmegen

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1994年 / 59卷 / 05期

关键词：

D O I：

10.1007/BF00348270

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical Second-Harmonic Generation (SHG) has been used to study the technologically very important buried semiconductor-metal and magnetic multilayer interfaces. For the case of GaAs-Au, the SHG intensity is shown to depend on the applied bias and Schottky barrier height, and is strongly affected by the sweepout of the carriers generated by the fs excitation pulses. For the M/Co/M multilayers, with M = Cu or Au, the SHG signals appear to depend strongly on the magnetization and can be shown to be interface specific.

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页码：531 / 536

页数：6

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