INTERACTION OF ENERGETIC IONS WITH INHOMOGENEOUS SOLIDS

被引：24

作者：

BODE, M ^{[1
]}

OURMAZD, A ^{[1
]}

CUNNINGHAM, J ^{[1
]}

HONG, M ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.67.843

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We use quantitative chemical mapping and statistical analysis to explore the microscopic consequences of the passage of energetic ions through AlAs/GaAs multilayers. We thus quantitatively characterize and microscopically identify the damage cascades produced by individual 320-keV Ga+ ions. Our results reveal a strong drift of the damage in an applied electric field, indicating the defects to be charged. We exploit this effect to show that the defects produced by the passage of energetic ions may be microscopically steered in a solid.

引用

收藏

页码：843 / 846

页数：4

相关论文

共 9 条

[1] 3-DIMENSIONAL DISTRIBUTIONS OF ION RANGE AND DAMAGE INCLUDING RECOIL TRANSPORT [J].

BIERSACK, JP .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :32-39

[2]

BODE M, 1990, MATER RES SOC SYMP P, V157, P197

[3]

De Cooman B. C., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V797, P185, DOI 10.1117/12.941041

[4] QUANTITATIVE CHEMICAL LATTICE IMAGING - THEORY AND PRACTICE [J].

OURMAZD, A ;

BAUMANN, FH ;

BODE, M ;

KIM, Y .

ULTRAMICROSCOPY, 1990, 34 (04) :237-255

[5] CHEMICAL MAPPING OF SEMICONDUCTOR INTERFACES AT NEAR-ATOMIC RESOLUTION [J].

OURMAZD, A ;

TAYLOR, DW ;

CUNNINGHAM, J .

PHYSICAL REVIEW LETTERS, 1989, 62 (08) :933-936

[6] QUANTIFYING THE INFORMATION-CONTENT OF LATTICE IMAGES [J].

OURMAZD, A ;

TAYLOR, DW ;

BODE, M ;

KIM, Y .

SCIENCE, 1989, 246 (4937) :1571-1577

[7] DEFECT STRUCTURE AND INTERMIXING OF ION-IMPLANTED ALXGA1-XAS/GAAS SUPERLATTICES [J].

RALSTON, J ;

WICKS, GW ;

EASTMAN, LF ;

DECOOMAN, BC ;

CARTER, CB .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :120-123

[8] FORCES ON CHARGED DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES [J].

TERSOFF, J .

PHYSICAL REVIEW LETTERS, 1990, 65 (07) :887-890

[9] INSITU STUDIES OF ION IRRADIATION EFFECTS IN AN ELECTRON-MICROSCOPE [J].

VETRANO, JS ;

BENCH, MW ;

ROBERTSON, IM ;

KIRK, MA .

METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1989, 20 (12) :2673-2680