SILICON SELF-INTERSTITIAL SUPERSATURATION DURING PHOSPHORUS DIFFUSION

被引：39

作者：

HARRIS, RM

ANTONIADIS, DA

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 10期

关键词：

D O I：

10.1063/1.94187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：937 / 939

页数：3

共 13 条

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