ACCURATE NOISE CHARACTERIZATION OF SHORT GATE LENGTH GAAS-MESFETS AND HEMTS FOR USE IN LOW-NOISE OPTICAL RECEIVERS

被引：19

作者：

GREAVES, SD

UNWIN, RT

机构：

[1] Electronic & Communications Division, University of Huddersfield, West Yorkshire

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1993年 / 6卷 / 01期

关键词：

NOISE CHARACTERIZATION; DEVICE MODELING; LOW-NOISE OPTICAL-RECEIVER DESIGN;

D O I：

10.1002/mop.4650060116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Accurate noise characterization of MESFETs and HEMTs is required for the design of high-frequency optical receivers. Here we consider a technique that extracts the intrinsic noise parameters P, R, C from measured noise data. Novel analytic expressions are presented as well as results that prove the validity of the technique.

引用

页码：60 / 65

页数：6

共 12 条

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