EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .2. DETERIORATION OF THE (III) SURFACE OF GERMANIUM AT 570-DEGREES-C-850-DEGREES-C

被引：7

作者：

GABOR, T

机构：

来源：

关键词：

D O I：

10.1149/1.2426261

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：821 / 824

页数：4

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