KONDO BEHAVIOR OF THE ELECTRICAL-RESISTIVITY IN USB AND UTE

被引：27

作者：

FRICK, B

SCHOENES, J

VOGT, O

机构：

[1] Eidgenoessische Technische, Hochschule, Lab fuer, Festkoerperphysik, Zurich, Switz, Eidgenoessische Technische Hochschule, Lab fuer Festkoerperphysik, Zurich, Switz

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1985年 / 47-8卷 / FEB期

关键词：

D O I：

10.1016/0304-8853(85)90491-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：549 / 551

页数：3

共 17 条

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[4]

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[5] TRANSPORT STUDIES OF KONDO BEHAVIOR, FERROMAGNETIC AND ANTI-FERROMAGNETIC ORDER IN U1-XTHXSB [J].

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SCHOENES, J ;

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ALLEN, JW .

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[6] EVIDENCE FOR A VALENCE TRANSITION IN UXY1-XSB [J].

FRICK, B ;

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VOGT, O .

SOLID STATE COMMUNICATIONS, 1984, 49 (12) :1133-1137

[7]

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[8]

KASUYA T, 1982, VALENCE INSTABILITIE, P359

[9] RESISTANCE MINIMUM IN DILUTE MAGNETIC ALLOYS [J].

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[10]

MULLER D, 1982, VALENCE INSTABILITIE, P463

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