AN IMPROVED GENERALIZED GUIDE FOR MOSFET SCALING

For the miniaturization of MOSFET's, a generalized guide for scaling had been published in 1980 [1]. This formula can be used as a good starting point before device fine tuning, and works well above 0.5 mum in channel length. It is expected, however. that for channel lengths below 0.5 muM, it becomes inaccurate because of the nature of the equation. Its erroneous implication is that if gate oxide or junction depth approaches zero, the channel length can be reduced to zero without suffering from short-channel effects. This brief presents a new formula where the functions are modified to correct this anomaly. Another important improvement is that the degree of short-channel effect is left as an input variable.to fit the different requirements of circuits. The revised formula has been shown to be accurate down to 0.1 mum channel length.