PRECURSOR FOR THE LOW-TEMPERATURE DEPOSITION OF TITANIUM PHOSPHIDE FILMS

Treatment of titanium tetrachloride with cyclohexylphosphine (2 equiv) affords the volatile adduct [TiCl4(C6H11PH2)(2)], which constitutes the first single-source precursor to titanium phosphide (TiP films). In addition, this precursor deposits films at much lower temperatures than is possible with existing processes. Films prepared using [TiCl4(C6H11PH2)(2)] at greater than or equal to 350 degrees C under low-pressure chemical vapor deposition conditions were slightly phosphorus-rich by RES analysis and revealed less than or equal to 2% carbon or chlorine impurities. The resistivities of films made at 400 and 600 degrees C were 286 and 421 mu Omega cm, respectively. The major volatile byproducts of the depositions were phosphine, hydrogen chloride, and cyclohexene. [TiCl4(C6H11PH2)2] --> CVD reactor, greater than or equal to 350 degrees C Tip films (1)