SCHOTTKY DIODE FABRICATION FOR ELECTROREFLECTANCE MEASUREMENTS

被引：11

作者：

STUDNA, AA ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1975年 / 46卷 / 06期

关键词：

D O I：

10.1063/1.1134299

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：735 / 738

页数：4

共 15 条

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ASPNES, DE ;

STUDNA, AA .

SOLID STATE COMMUNICATIONS, 1972, 11 (10) :1375-&

[3] HIGH-RESOLUTION ELECTROREFLECTANCE MEASUREMENTS OF GAAS [J].

ASPNES, DE ;

STUDNA, AA .

SURFACE SCIENCE, 1973, 37 (01) :631-638

[4] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].

ASPNNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652

[5] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].

CARDONA, M ;

SHAKLEE, KL ;

POLLAK, FH .

PHYSICAL REVIEW, 1967, 154 (03) :696-+

[6]

Cardona M., 1969, MODULATION SPECTROSC

[7] ELECTRONIC-STRUCTURE OF GAAS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW LETTERS, 1974, 32 (12) :674-677

[8] MOS CAPACITORS FOR SURFACE BARRIER ELECTROREFLECTANCE MEASUREMENTS [J].

FISCHER, JE .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (06) :872-&

[9]

GREENAWAY DL, 1968, OPTICAL PROPERTIES B, pCH2

[10]

McIntyre Joe, COMMUNICATION

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