RADIATION-INDUCED DEFECT CENTERS IN THERMALLY GROWN OXIDE-FILMS

被引:47
作者
MARQUARDT, CL [1 ]
SIGEL, GH [1 ]
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
关键词
D O I
10.1109/TNS.1975.4328111
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2234 / 2239
页数:6
相关论文
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