(INGA)AS-GAAS STRAINED LAYER QUANTUM-WELLS - EXCITONIC PROPERTIES AND ELECTRONIC-STRUCTURE

被引：4

作者：

DUGGAN, G

MOORE, KJ

WOODBRIDGE, K

ROBERTS, C

机构：

[1] Philips Research Laboratories, Redhill

来源：

SURFACE SCIENCE | 1990年 / 228卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90316-Z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The heavy-hole exciton binding energy in 14 and 25 Å In0.15Ga0.85AsGaAs isolated quantum wells has been measured directly. We report the first direct observation of a decrease in binding energy with decreasing well width. Favourable comparisons with our calculation of this quantity are presented. © 1990.

引用

页码：310 / 313

页数：4

共 7 条

[1] PSEUDOMORPHIC GAAS/INGAAS SINGLE QUANTUM WELLS BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].