MULTI-GIGAHERTZ-BANDWIDTH INTENSITY MODULATORS USING TUNABLE-ELECTRON-DENSITY MULTIPLE QUANTUM-WELL WAVE-GUIDES

被引:17
作者
ZUCKER, JE
JONES, KL
WEGENER, M
CHANG, TY
SAUER, NJ
DIVINO, MD
CHEMLA, DS
机构
[1] AT and T Bell Laboratories, Holmdel
关键词
D O I
10.1063/1.105965
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the first measurement of modulation bandwidth in electron transfer quantum well modulators. A device with 1 pF capacitance provides > 10 dB optical modulation depth at 1.537-mu-m wavelength with a 3 dB electrical bandwidth of 5.7 GHz. Optical pump-probe measurements indicate that the fundamental response time is determined by the voltage-dependent speed of carrier escape from the well.
引用
收藏
页码:201 / 203
页数:3
相关论文
共 16 条
[1]   HIGHLY EFFICIENT WAVE-GUIDE PHASE MODULATOR FOR INTEGRATED OPTOELECTRONICS [J].
ALPING, A ;
WU, XS ;
HAUSKEN, TR ;
COLDREN, LA .
APPLIED PHYSICS LETTERS, 1986, 48 (19) :1243-1245
[2]   IMPROVED VERY-HIGH-SPEED PACKAGED INGAAS PIN PUNCH-THROUGH PHOTODIODE [J].
BURRUS, CA ;
BOWERS, JE ;
TUCKER, RS .
ELECTRONICS LETTERS, 1985, 21 (07) :262-263
[3]  
CAVICCHI RE, 1988, PHYS REV B, V38, P13475
[4]   COMPARISON OF PHASE MODULATION OF GAAS/ALGAAS DOUBLE HETEROSTRUCTURES [J].
FAIST, J ;
REINHART, FK ;
MARTIN, D .
ELECTRONICS LETTERS, 1987, 23 (25) :1391-1392
[5]   EXCITON SATURATION IN ELECTRICALLY BIASED QUANTUM-WELLS [J].
FOX, AM ;
MILLER, DAB ;
LIVESCU, G ;
CUNNINGHAM, JE ;
HENRY, JE ;
JAN, WY .
APPLIED PHYSICS LETTERS, 1990, 57 (22) :2315-2317
[6]   INP OPTICAL SWITCH ARRAY MODULE HIGH-FREQUENCY PERFORMANCE - MEASUREMENTS AND ANALYSIS [J].
HARTMAN, DH ;
TAKAHASHI, Y ;
INOUE, H .
ELECTRONICS LETTERS, 1990, 26 (07) :436-438
[7]   TUNABLE MQW-DBR LASER WITH MONOLITHICALLY INTEGRATED GAINASP INP DIRECTIONAL COUPLER SWITCH [J].
HERNANDEZGIL, F ;
KOCH, TL ;
KOREN, U ;
GNALL, RP ;
BURRUS, CA .
ELECTRONICS LETTERS, 1989, 25 (19) :1271-1272
[8]   LOW-LOSS INGAAS/INP MULTIPLE QUANTUM-WELL OPTICAL ELECTROABSORPTION WAVE-GUIDE MODULATOR [J].
KOREN, U ;
MILLER, BI ;
KOCH, TL ;
EISENSTEIN, G ;
TUCKER, RS ;
BARJOSEPH, I ;
CHEMLA, DS .
APPLIED PHYSICS LETTERS, 1987, 51 (15) :1132-1134
[9]  
LIN SH, 1987, APPL PHYS LETT, V51, P83
[10]   EFFECT OF HOLE PILE-UP AT HETEROINTERFACE ON MODULATION VOLTAGE IN GAINASP ELECTROABSORPTION MODULATORS [J].
SUZUKI, M ;
TANAKA, H ;
AKIBA, S .
ELECTRONICS LETTERS, 1989, 25 (02) :88-89