HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY OF THIN-FILMS OF C60 ON SI(100)

被引：264

作者：

GENSTERBLUM, G ^{[1
]}

PIREAUX, JJ ^{[1
]}

THIRY, PA ^{[1
]}

CAUDANO, R ^{[1
]}

VIGNERON, JP ^{[1
]}

LAMBIN, P ^{[1
]}

LUCAS, AA ^{[1
]}

KRATSCHMER, W ^{[1
]}

机构：

[1] MAX PLANCK INST NUCL PHYS,W-6900 HEIDELBERG 1,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.67.2171

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the first measurements by high-resolution electron-energy-loss spectroscopy of the elementary excitations of C60 thin films deposited on Si(100). By varying the primary electron energy, the spectrum extending from the far ir to the far vuv has been investigated. Many spectral features are comparable to earlier observations by photon, photoelectron, and neutron spectroscopies. New molecular excitations are revealed including the lowest electronic excitation at 1.5 eV and collective excitations at 6.3 and 28 eV.

引用

页码：2171 / 2174

页数：4

共 25 条

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