ITERATIVE METHODS IN SEMICONDUCTOR-DEVICE SIMULATION

被引：12

作者：

BANK, RE

COUGHRAN, WM

DRISCOLL, MA

SMITH, RK

FICHTNER, W

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] SWISS FED INST TECHNOL,INTEGRATED SYST LAB,CH-8092 ZURICH,SWITZERLAND

来源：

COMPUTER PHYSICS COMMUNICATIONS | 1989年 / 53卷 / 1-3期

关键词：

D O I：

10.1016/0010-4655(89)90160-4

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

引用

页码：201 / 212

页数：12

共 64 条

[1]

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[3]

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[4]

AXELSSON O, 1978, INT J NUMER MATH ENG, V14, P1001

[5]

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[6] INTEGRATED SEMICONDUCTOR MAGNETIC-FIELD SENSORS [J].

BALTES, HP ;

POPOVIC, RS .

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[7] TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF A SILICON MAGNETIC-FIELD SENSOR [J].

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SCHMIDTWEINMAR, HG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) :996-999

[8]

Bank R. E., 1986, Process and device modeling, P229

[9]

BANK RE, 1983, IEEE T ELECTRON DEV, V30, P1031, DOI 10.1109/T-ED.1983.21257

[10] TRANSIENT SIMULATION OF SILICON DEVICES AND CIRCUITS [J].

BANK, RE ;

COUGHRAN, WM ;

FICHTNER, W ;

GROSS, EH ;

ROSE, DJ ;

SMITH, RK .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1985, 4 (04) :436-451

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