A 5-10-GHZ, 1-WATT HBT AMPLIFIER WITH 58-PERCENT PEAK POWER-ADDED EFFICIENCY

被引：2

作者：

SALIB, M

ALI, F

GUPTA, A

BAYRAKTAROGLU, B

DAWSON, D

机构：

[1] Advanced Technology Division, Westinghouse Electric Corporation, Baltimore

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1994年 / 4卷 / 10期

关键词：

Heterojunction bipolar amplifiers - Power added efficiency - Single stage hybrid microstrip amplifiers;

D O I：

10.1109/75.324703

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Four 0.25-W GaAs Heterojunction Bipolar Transistors (HBT's) were combined in a single-stage hybrid microstrip amplifier. An output power of minimum 1 Watt (W) was achieved over the 5.5-9.5 GHz band with > 48% power-added efficiency (PAE). The peak PAE was 58% at 7 and 9.5 GHz with an average efficiency of 52% over the 5-10 GHz band. This result was reproduced on two more units with a minimum efficiency of 48% and an average efficiency of 51%. To our knowledge, this is the highest efficiency obtained from any 1-W amplifier covering 5-10 GHz bandwidth.

引用

页码：320 / 322

页数：3

共 5 条

[1]

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[2]

Bayraktaroglu B., GaAs HBTs for Microwave Integrated Circuits, Proc. IEEE, 81, 12, pp. 1762-1785, (1993)

[3]

Ramachandran R., Nijjar M., Podell A., Stoneham E., Mitchell S., Wang N.L., Ho W.J., Chang M.F., Sullivan G.J., Higgins J.A., Asbeck P.M., Cisco T., A High-Efficiency HBT MMIC Power Amplifier, IEEE GaAs 1C Symp. Dig, pp. 357-360, (1990)

[4]

Komiak J., Yang L., Brozovich R., Fu S., Smith D., Broadband High Efficiency HBT MMIC Power Amplifier Fabricated with realigned process, 1993 IEEE MTT-S Symp. Dig, (1476)

[5]

Gupta A., Microwave Power Applications of Gallium Arsenide Heterojunction Bipolar Transistors, Proc. IEEE Princeton Section Sarnoff Symp, (1993)

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