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FREQUENCY TUNING OF GAAS LASER DIODE BY UNIAXIAL STRESS

被引：17
作者：
MEYERHOFER, D
BRAUNSTEIN, R
机构：
来源：
APPLIED PHYSICS LETTERS | 1963年 / 3卷 / 10期
关键词：
D O I：
10.1063/1.1753836
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：171 / 172
页数：2
相关论文
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[2]  
GALEENR FL, 1963, PHYS REV LETT, V10, P476
[3]   DEFORMATION POTENTIAL IN GERMANIUM FROM OPTICAL ABSORPTION LINES FOR EXCITON FORMATION [J].
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[4]   BAND STRUCTURE OF INTERMETALLIC SEMICONDUCTORS FROM PRESSURE EXPERIMENTS [J].
PAUL, W .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2082-&
[5]   OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J].
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PHYSICAL REVIEW, 1962, 127 (03) :768-+
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