ANALYTICAL APPROACH TOWARDS TRANSIENT PHENOMENA IN PHOTOCONDUCTORS

被引：14

作者：

JOSHI, NV

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.27.6272

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6272 / 6278

页数：7

共 21 条

[1]

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[2]

ANTONENKO RS, 1975, SOV PHYS SEMICOND+, V9, P1533

[3]

BAKHADYRKHANOV MK, 1976, SOV PHYS SEMICOND+, V10, P195

[4]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[5]

Bube R.H., 1960, PHOTOCONDUCTIVITY SO

CHEN, R ;

MCKEEVER, SWS ;

DURRANI, SA .

PHYSICAL REVIEW B, 1981, 24 (09) :4931-4944

[7] TRAP-CONTROLLED TRANSIENT PHOTOCONDUCTIVITY IN DIELECTRICS [J].

FLEMING, RJ .

JOSHI, NV ;

BALLESTERO, R .

MAXIA, V .

PHYSICAL REVIEW B, 1980, 21 (02) :749-759

[10] ENTROPY PRODUCTION IN LUMINESCENT PROCESSES [J].

MAXIA, V .

LETTERE AL NUOVO CIMENTO, 1979, 24 (03) :89-96