THE EFFECT OF AN ORGANIC-BASE IN CHEMICALLY AMPLIFIED RESIST ON PATTERNING CHARACTERISTICS USING KRF LITHOGRAPHY

被引：67

作者：

KAWAI, Y

OTAKA, A

TANAKA, A

MATSUDA, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa Pref., 243-01, 3-1, Morinosato Wakamiya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1994年 / 33卷 / 12B期

关键词：

LITHOGRAPHY; KRF EXCIMER LASER; CHEMICALLY AMPLIFIED POSITIVE RESIST; ORGANIC BASE; SUBSTRATE CONTAMINATION; AIR-BONE CONTAMINATION; POSTEXPOSURE DELAY (FED);

D O I：

10.1143/JJAP.33.7023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new resist system composed of an SEPR chemically amplified (CA) positive resist and an N-methyl pyrrolidone (NMP) organic base has been developed for KrF excimer laser lithography. Using 0.30-mu m 1&s patterns formed with KrF stepper, we studied the effect of contamination from substrate films of plasma chemical vapor deposition silicon dioxide (P-CVD SiO2), low pressure CVD silicon nitride (LP-CVD Si3N4) and reactive sputtered titanium nitride (TiN), and of airborne contamination under the condition of an 8-ppb of ammonia. The results clarify the new resist system reduces the effect of substrate film as well as airborne contamination, The new resist system enables us to form fine patterns on any substrate and attains more than one hour post-exposure delay without overcoat and undercoat films.

引用

页码：7023 / 7027

页数：5