GROWTH OF ALPHA-GA2O3 SINGLE CRYSTALS AT 44 KBARS - (CR3+-DOPED - NAOH FLUX - LASER MATERIAL - E)

被引：66

作者：

REMEIKA, JP

MAREZIO, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 8卷 / 04期

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D O I：

10.1063/1.1754500

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：87 / &

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