共 22 条
[1]
OPTIMAL SURFACE AND GROWTH FRONT OF III-V SEMICONDUCTORS IN MOLECULAR-BEAM EPITAXY - A STUDY OF KINETIC PROCESSES VIA REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION SPECULAR BEAM INTENSITY MEASUREMENTS ON GAAS(100)
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (04)
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[3]
Chen P., UNPUB
[4]
PHOTOLUMINESCENCE FROM ALGAAS-GAAS SINGLE QUENTUM WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1985, 24 (07)
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[5]
MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
:540-546
[7]
GHAISAS SV, UNPUB J CRYSTAL GROW
[9]
KIM JY, 1986, 27TH EL MAT C AMH