NEAR BAND-EDGE LUMINESCENCE STUDIES OF THE EFFECT OF INTERFACIAL STEP DISTRIBUTION AND ALLOY DISORDER IN ULTRATHIN GAAS/ALXGA1-XAS(100) SINGLE QUANTUM-WELLS GROWN BY MBE UNDER RHEED DETERMINED CONDITIONS

被引：11

作者：

VOILLOT, F ^{[1
]}

KIM, JY ^{[1
]}

TANG, WC ^{[1
]}

MADHUKAR, A ^{[1
]}

CHEN, P ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1987年 / 3卷 / 03期

关键词：

D O I：

10.1016/0749-6036(87)90079-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：313 / 323

页数：11

共 22 条

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