ENSEMBLE MONTE-CARLO SIMULATION OF TE-INDUCED INTERMIXING OF ALGAAS-BASED INTERFACES

被引：3

作者：

KAHEN, KB

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 21期

关键词：

D O I：

10.1063/1.100322

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2071 / 2073

页数：3

共 17 条

[1] SPECIFIC SITE LOCATION OF S AND SI IN ION-IMPLANTED GAAS [J].

BHATTACHARYA, RS ;

PRONKO, PP ;

LING, SC .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :880-882

[2] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991

[3] KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES [J].

CIBERT, J ;

PETROFF, PM ;

WERDER, DJ ;

PEARTON, SJ ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :223-225

[4] LAYER INTERDIFFUSION IN SE-DOPED ALXGA1-XAS-GAAS SUPERLATTICES [J].

DEPPE, DG ;

HOLONYAK, N ;

HSIEH, KC ;

GAVRILOVIC, P ;

STUTIUS, W ;

WILLIAMS, J .

APPLIED PHYSICS LETTERS, 1987, 51 (08) :581-583

[5] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS [J].

DEPPE, DG ;

HSIEH, KC ;

HOLONYAK, N ;

BURNHAM, RD ;

THORNTON, RL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4515-4520

[6] CHANGES IN ELECTRON CONCENTRATION OF DONOR-DOPED GAAS CRYSTALS CAUSED BY ANNEALING [J].

FULLER, CS ;

WOLFSTIRN, KB .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2287-+

[7] DIFFUSION IN COMPOUND SEMICONDUCTORS [J].

GOLDSTEIN, B .

PHYSICAL REVIEW, 1961, 121 (05) :1305-&

[8]

MEI P, 1988, IN PRESS 1988 P SPRI

[9] SELF-DIFFUSION OF GALLIUM IN GALLIUM-ARSENIDE [J].

PALFREY, HD ;

BROWN, M ;

WILLOUGHBY, AFW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (10) :2224-2228

[10] ANNEALING AND ARSENIC OVERPRESSURE EXPERIMENTS ON DEFECTS IN GALLIUM ARSENIDE [J].

POTTS, HR ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) :2098-&

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