GAAS/GAALAS SELECTIVE MOCVD EPITAXY AND PLANAR ION-IMPLANTATION TECHNIQUE FOR COMPLEX INTEGRATED OPTOELECTRONIC CIRCUIT APPLICATIONS

[1] ASBECK PM, 1982, IEEE ELECTRON DEVICE, V3, P366

[2] INTEGRATED OPTOELECTRONICS - THE MARRIAGE OF LASERS, DETECTORS, AND TRANSISTORS IN A SINGLE MONOLITHIC PACKAGE PROMISES FAST, RELIABLE DATA-TRANSMISSION [J]. IEEE SPECTRUM, 1982, 19 (05) : 38 - 45

[3] Carney J. K., 1982, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1982, P38

[4] Dupuis R. D., 1979, Gallium Arsenide and Related Compounds 1978, P1

[5] KOLBAS R, 1982, SPIE INTEGRATED OP 2, V321, P94

[6] LEE, 1982, IEEE J SOLID STATE C, V17, P638

[7] HIGH-PERFORMANCE MODULATION-DOPED GAAS INTEGRATED-CIRCUITS WITH PLANAR STRUCTURES [J]. ELECTRONICS LETTERS, 1983, 19 (05) : 155 - 157

[8] GIGABIT LOGIC OPERATION WITH ENHANCEMENT-MODE GAAS-MESFET ICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 199 - 204

[9] YAMAKOSHI S, 1983, 4TH INT C INT OPT OP, P140

[1] ASBECK PM, 1982, IEEE ELECTRON DEVICE, V3, P366

[2] INTEGRATED OPTOELECTRONICS - THE MARRIAGE OF LASERS, DETECTORS, AND TRANSISTORS IN A SINGLE MONOLITHIC PACKAGE PROMISES FAST, RELIABLE DATA-TRANSMISSION [J]. IEEE SPECTRUM, 1982, 19 (05) : 38 - 45

[3] Carney J. K., 1982, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1982, P38

[4] Dupuis R. D., 1979, Gallium Arsenide and Related Compounds 1978, P1

[5] KOLBAS R, 1982, SPIE INTEGRATED OP 2, V321, P94

[6] LEE, 1982, IEEE J SOLID STATE C, V17, P638

[7] HIGH-PERFORMANCE MODULATION-DOPED GAAS INTEGRATED-CIRCUITS WITH PLANAR STRUCTURES [J]. ELECTRONICS LETTERS, 1983, 19 (05) : 155 - 157

[8] GIGABIT LOGIC OPERATION WITH ENHANCEMENT-MODE GAAS-MESFET ICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 199 - 204

[9] YAMAKOSHI S, 1983, 4TH INT C INT OPT OP, P140