QUANTIZATION EFFECTS IN THE PHOTOELECTROCHEMISTRY OF SUPERLATTICE PHOTOELECTRODES

被引:18
作者
NOZIK, AJ
THACKER, BR
OLSON, JM
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D O I
10.1038/316051a0
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
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页码:51 / 53
页数:3
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[2]   DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J].
DINGLE, R ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1327-1330
[3]  
Dingle R, 1975, FESTKORPERPROBLEME, V15, P21
[4]  
DOHLER GH, 1984, SCI AM, V249, P144
[5]   NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J].
ESAKI, L ;
CHANG, LL .
PHYSICAL REVIEW LETTERS, 1974, 33 (08) :495-498
[6]  
FOJTIK A, 1984, BER BUNSEN PHYS CHEM, V88, P969, DOI 10.1002/bbpc.19840881010
[7]   QUANTUM SIZE EFFECTS IN GAAS/GAASXP1-X STRAINED-LAYER SUPERLATTICES [J].
GOURLEY, PL ;
BIEFELD, RM .
APPLIED PHYSICS LETTERS, 1984, 45 (07) :749-751
[8]   MINORITY-CARRIER DIFFUSION LENGTHS IN GAP/GAASXP1-X STRAINED-LAYER SUPERLATTICES [J].
GOURLEY, PL ;
BIEFELD, RM ;
ZIPPERIAN, TE ;
WICZER, JJ .
APPLIED PHYSICS LETTERS, 1984, 44 (10) :983-985
[9]  
NOZIK AJ, 1985, J PHYS CHEM-US, V89, P397, DOI 10.1021/j100249a004
[10]   ELECTRONIC-PROPERTIES OF STRAINED-LAYER SUPER-LATTICES [J].
OSBOURN, GC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :379-382