DESIGN AND CHARACTERIZATION OF HIGH-PERFORMANCE 60-GHZ PSEUDOMORPHIC MODFET-LNAS IN CPW-TECHNOLOGY BASED ON ACCURATE S-PARAMETER AND NOISE MODELS

An accurate database for active and passive MMIC components valid up to millimeter-wave frequencies has been established. The CAE models for the transistors and the passive CPW-components, which include the coplanar T-junction, are derived from on-wafer S-parameter measurements up to 63 GHz. For noise modeling of the MODFETs up to millimeter-wave frequencies, we have pursued a novel approach which is based on the temperature noise model reported by Pospiezalski [1]. The parameter T(d) which is required for the temperature model, is extracted from on-wafer noise parameter measurements up to 18 Ghz. Using this database, we have designed and fabricated low noise V-band 2-stage amplifiers using pseudomorphic MODFETs on GaAs substrate which have a performance of 10.5 dB gain and 5.2 dB noise figure at 58.5 GHz. A very good agreement between simulated and measured MMIC gain and noise performance is achieved up to V-band.