GAAS/ALGAAS MICRODISK LASERS

被引：80

作者：

MOHIDEEN, U

HOBSON, WS

PEARTON, SJ

REN, F

SLUSHER, RE

机构：

[1] ATandT Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 15期

关键词：

D O I：

10.1063/1.111740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs/AlGaAs microdisk lasers have been achieved using continuous optical pumping at 80 K. Surface passivation with a new sulfur/SiN(x) process is required in order to achieve steady-state lasing. Approximately 15% of the spontaneous emission is coupled into the lasing mode.

引用

页码：1911 / 1913

页数：3

共 7 条

[1] SURFACE RECOMBINATION IN DRY ETCHED ALGAAS/GAAS DOUBLE HETEROSTRUCTURE P-I-N MESA DIODES
CORBETT, B
KELLY, WM
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (01) : 87 - 89
[2] SPONTANEOUS EMISSION FROM EXCITONS IN THIN DIELECTRIC LAYERS
HO, ST
MCCALL, SL
SLUSHER, RE
[J]. OPTICS LETTERS, 1993, 18 (11) : 909 - 911
[3] SINX SULFIDE PASSIVATED GAAS/ALGAAS MICRODISK LASERS
HOBSON, WS
MOHIDEEN, U
PEARTON, SJ
SLUSHER, RE
REN, F
[J]. ELECTRONICS LETTERS, 1993, 29 (25) : 2199 - 2200
[4] ROOM-TEMPERATURE OPERATION OF MICRODISK LASERS WITH SUBMILLIAMP THRESHOLD CURRENT
LEVI, AFJ
SLUSHER, RE
MCCALL, SL
TANBUNEK, T
COBLENTZ, DL
PEARTON, SJ
[J]. ELECTRONICS LETTERS, 1992, 28 (11) : 1010 - 1012
[5] WHISPERING-GALLERY MODE MICRODISK LASERS
MCCALL, SL
LEVI, AFJ
SLUSHER, RE
PEARTON, SJ
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (03) : 289 - 291
[6] THRESHOLD CHARACTERISTICS OF SEMICONDUCTOR MICRODISK LASERS
SLUSHER, RE
LEVI, AFJ
MOHIDEEN, U
MCCALL, SL
PEARTON, SJ
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (10) : 1310 - 1312
[7] OPTICAL PROCESSES IN MICROCAVITIES
YAMAMOTO, Y
SLUSHER, RE
[J]. PHYSICS TODAY, 1993, 46 (06) : 66 - 73

← 1 →