SILICON ZONE SUBLIMATION REGROWTH

被引：5

作者：

ALEKSANDROV, LN ^{[1
]}

LOZOVSKII, SV ^{[1
]}

KNYAZEV, SY ^{[1
]}

机构：

[1] S ORDZHONIKIDZE POLYTECH INST,NOVOCHERKASSK,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 107卷 / 01期

关键词：

MASS TRANSFER - SEMICONDUCTING SILICON;

D O I：

10.1002/pssa.2211070122

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theoretical analysis of mass transfer process at zone sublimation regrowth (ZSR) is performed. An experiment was carried out for the case of silicon. Principal regularities for the process are the dependence of the process rate and dopant transfer efficiency on temperature and geometrical parameters as well as radial distribution of their values. It is established that the type of dopant mass transfer regularities is determined by an atom distribution law along their motion during evaporation and reevaporation from the source and the substrate surfaces. Experimental results obtained for As, Ga, Sb atom transfer are in good agreement with the theoretical model for atom distribution according to isotropic law.

引用

页码：213 / 223

页数：11