DOPANT CONCENTRATION DEPENDENCES AND SYMMETRIC FERMI-LEVEL MOVEMENT FOR METAL N-TYPE AND P-TYPE GAAS(110) INTERFACES FORMED AT 60-K

被引：40

作者：

ALDAO, CM

ANDERSON, SG

CAPASSO, C

WADDILL, GD

VITOMIROV, IM

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.39.12977

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：12977 / 12980

页数：4

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