ON THE TEMPERATURE-DEPENDENCE OF THE DEPOSITION RATE OF AMORPHOUS, HYDROGENATED CARBON-FILMS

被引:43
作者
KERSTEN, H [1 ]
KROESEN, GMW [1 ]
机构
[1] EINDHOVEN UNIV TECHNOL,DEPT PHYS,5600 MB EINDHOVEN,NETHERLANDS
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 01期
关键词
D O I
10.1116/1.576403
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The temperature behavior of the deposition rate of amorphous, hydrogenated carbon films is analyzed both experimentally and theoretically. A reactor based on the supersonic expansion of an arc plasma is used. The film thickness is measured using in situ He-Ne ellipsometry. The surface temperature is measured with thermocouples. Comparison of the presented model with the experimental results suggests that the deposited atoms and radicals diffuse over the surface in a weakly bound, adsorbed layer before they are incorporated in the film. Direct incorporation upon chemisorption is improbable. © 1990, American Vacuum Society. All rights reserved.
引用
收藏
页码:38 / 42
页数:5
相关论文
共 17 条
[1]  
Avery H.E., 1974, BASIC REACTION KINET, Vnineteenth
[2]  
Azzam R. M. A., 1977, ELLIPSOMETRY POLARIZ
[3]  
BISSCHOPS THJ, 1987, THESIS U TECHNOLOGY
[4]   ACTIVATED CHEMISORPTION - INTERNAL DEGREES OF FREEDOM AND MEASURED ACTIVATION-ENERGIES [J].
BRASS, SG ;
EHRLICH, G .
PHYSICAL REVIEW LETTERS, 1986, 57 (20) :2532-2535
[5]  
Deutsch H., 1981, Beitraege aus der Plasma Physik, V21, P279, DOI 10.1002/ctpp.19810210405
[6]  
DEUTSCH H, 1988, CONTRIB PLASM PHYS, V28, P49
[7]  
DEUTSCH H, IN PRESS BASIC MECHA
[8]   COMPUTER-SIMULATION OF A CF4 PLASMA-ETCHING SILICON [J].
EDELSON, D ;
FLAMM, DL .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (05) :1522-1531
[9]   DYNAMICS OF A LANGMUIR-HINSHELWOOD-TYPE RECOMBINATION REACTION [J].
FLEISCHMANN, ED ;
ADAMS, JE .
SURFACE SCIENCE, 1988, 193 (03) :593-615
[10]  
HIROSE M, 1986, PLASMA DEPOSITED THI, P21