ELECTROOPTICAL PROPERTIES OF POLYMERIC SEMICONDUCTOR-DEVICES CONSTRUCTED FROM POLY (3-HEXYL THIENYLENE)

被引：10

作者：

ZIEMELIS, KE ^{[1
]}

HUSSAIN, AT ^{[1
]}

BRADLEY, DDC ^{[1
]}

FRIEND, RH ^{[1
]}

RUHE, J ^{[1
]}

WEGNER, G ^{[1
]}

机构：

[1] MAX PLANCK INST POLYMER RES,W-6500 MAINZ,GERMANY

来源：

SYNTHETIC METALS | 1991年 / 41卷 / 03期

关键词：

D O I：

10.1016/0379-6779(91)91552-L

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MIS structures fabricated with a conjugated polymer as the active semiconductor are well suited for the investigation of charge storage in self-localised excitations. In such a structure, the gate electrode is used to control the surface or space charge densities; the formation of accumulation and inversion layers being of particular interest as charge is introduced into the polymer without associated dopant ions. We report measurements of the electrical and optical properties of devices fabricated with poly (3-hexyl thienylene).

引用

页码：1045 / 1050

页数：6

共 20 条

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BAERISWYL D, PREPRINT

[2] LIGHT-INDUCED LUMINESCENCE QUENCHING IN PRECURSOR-ROUTE POLY(PARA-PHENYLENE VINYLENE) [J].