ZERO-NET-STRAIN MULTIQUANTUM WELL LASERS

被引：15

作者：

SELTZER, CP

PERRIN, SD

TATHAM, MC

COOPER, DM

机构：

[1] British Telecom Laboratories, Martlesham Heath Ipswich

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 14期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19910795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A zero-net-strain MQW wafer has been grown. The structure consisted of 16 In0.67Ga0.33As wells with 15 InGaAsP (lambda-g = 1.3-mu-m) negatively mismatched barriers. Short buried heterostructure lasers exhibited low CW threshold currents and high output powers. RIN measurements imply a maximum 3 dB modulation bandwidth of 38 GHz.

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收藏

页码：1268 / 1269

页数：2

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