THE MINIMUM METALLIC CONDUCTIVITY IN HEAVILY DOPED SEMICONDUCTORS THE EXPERIMENTAL-EVIDENCE AND ITS INTERPRETATION

被引：16

作者：

MOTT, NF ^{[1
]}

KAVEH, M ^{[1
]}

机构：

[1] BAR ILAN UNIV,DEPT PHYS,RAMAT GAN,ISRAEL

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1983年 / 47卷 / 02期

关键词：

D O I：

10.1080/13642812.1983.9728437

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L17 / L24

页数：8

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