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ON FORMATION OF STRUCTURAL DEFECTS RESPONSIBLE FOR THE 606 CM-1 LINE IN RAMAN-SPECTRUM OF VITREOUS SIO2

被引：5
作者：
CHMEL, A
SOCHIVKIN, GM
机构：
[1] Acad of Sciences of the USSR, Leningrad, USSR, Acad of Sciences of the USSR, Leningrad, USSR
来源：
SOLID STATE COMMUNICATIONS | 1986年 / 58卷 / 06期
关键词：
RAMAN SCATTERING;
D O I：
10.1016/0038-1098(86)90805-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Kinetics of annealing of structural defects in vitreous SiO//2 responsible for the Raman active line at 606 cm** minus **1 has been studied. Determined activation energy of formation of the defects appeared to vary from 3. 9 ev for water-containing samples to 4. 5 ev for water-free ones. It is concluded that the centers responsible for the 606 cm** minus **1 line are the products of chemical bond ruptures in the silica network.
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页码：363 / 365
页数：3
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