MODEL FOR INTERFACE REACTION CONTROL IN SUPERPLASTIC DEFORMATION OF NONSTOICHIOMETRIC CERAMICS

被引:14
作者
RAJ, R
机构
[1] Department of Materials Science and Engineering, Cornell University, Ithaca
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1993年 / 166卷 / 1-2期
关键词
D O I
10.1016/0921-5093(93)90313-4
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Experiments on superplastic deformation of ceramics that are non-stoichiometric, or which may have interfaces of non-stoichiometric character, exhibit two properties that differ from those of stoichiometric ceramics: (a) they have high superplastic ductilities, indicating unusual resistance to interface cavitation; (b) their stress-strain-rate response has the appearance of a threshold stress. A model that is based upon the idea that interfaces in non-stoichiometric ceramics may harbor a space charge layer is presented as an explanation for the threshold stress. The fundamental origin of the space charge lies in the electronic structure of the interfaces in non-stoichiometric ceramics (which is poorly understood). If correct, these ideas highlight the importance of electrical effects in understanding the mechanisms that determine the mechanical properties of interfaces in structural ceramics.
引用
收藏
页码:89 / 95
页数:7
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