INSITU STUDY OF IMPLANTATION-INDUCED SILICAN AMORPHIZATION

被引：13

作者：

RUAULT, MO

CHAUMONT, J

BERNAS, H

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 02期

关键词：

D O I：

10.1109/TNS.1983.4332631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1746 / 1748

页数：3

共 15 条

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LALU, F ;

DUMOULIN, L .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :1033-1038

[2]

BERNAS H, 1981, NIM, V182, P841

[3] FEATURES OF COLLISION CASCADES IN SILICON AS DETERMINED BY TRANSMISSION ELECTRON-MICROSCOPY [J].

HOWE, LM ;

RAINVILLE, MH .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :143-151

[4] COLLISION CASCADES IN SILICON [J].

HOWE, LM ;

RAINVILLE, MH ;

HAUGEN, HK ;

THOMPSON, DA .

NUCLEAR INSTRUMENTS & METHODS, 1980, 170 (1-3) :419-425

[5]

JAGER W, 1979, UNPUB 8TH INT C AT C

[6]

LAMOISE AM, 1976, J PHYS LETT-PARIS, V37, pL287, DOI 10.1051/jphyslet:019760037011028700

[7] THE CRYSTALLINE-TO-AMORPHOUS TRANSITION IN ION-BOMBARDED SILICON [J].

MULLER, G ;

KALBITZER, S .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03) :307-325

[8]

Riviere J.C., UNPUB

[9] TRANSMISSION ELECTRON-MICROSCOPE INVESTIGATIONS OF DEFECTS PRODUCED BY INDIVIDUAL DISPLACEMENT CASCADES IN SI AND GE [J].

RUAULT, MO ;

JAGER, W .

JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN) :67-73

[10]

RUAULT MO, UNPUB

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