RANGE DISTRIBUTION OF IMPLANTED CESIUM IONS IN SILICON DIOXIDE FILMS

被引：6

作者：

FISHBEIN, BJ

PLUMMER, JD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 12期

关键词：

D O I：

10.1063/1.340283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5887 / 5889

页数：3

共 14 条

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[10] STOPPING CROSS SECTIONS FOR 0.3-TO 1.7-MEV HELIUM IONS IN SILICON AND SILICON DIOXIDE [J].

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