PROTON-CONDUCTING SILICA-GEL FILMS DOPED WITH A VARIETY OF ELECTROLYTES

被引：87

作者：

TATSUMISAGO, M

HONJO, H

SAKAI, Y

MINAMI, T

机构：

[1] Department of Applied Materials Science, Osaka Prefecture University, Sakai, Osaka

来源：

SOLID STATE IONICS | 1994年 / 74卷 / 3-4期

关键词：

IONIC CONDUCTIVITY PROTON; SILICA-GEL; TUNGSTOPHOSPHORIC ACID; KEGGIN ION;

D O I：

10.1016/0167-2738(94)90198-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silica-gel films containing perchloric acid HClO4, dodecatungstophosphoric acid H3PW12O40.29H2O, or tetra-n-buthylammonium perchlorate (n-Bu)4NClO4 were prepared by the sol-gel method using tetraethoxysilane and each dopant. HClO4- and WPA-doped gel films exhibited higher conductivities of 10(-2)-10(-1) S cm-1 at room temperature than the pure silica and (n-Bu)4NClO4-doped gel films (10(-5) S cm-1).

引用

页码：105 / 108

页数：4

共 5 条

[1] SOL-GEL IONICS [J].