THE APPLICATION OF NITROGEN ION-IMPLANTATION IN SILICON TECHNOLOGY

被引：42

作者：

JOSQUIN, WJMJ

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90855-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：581 / 587

页数：7

共 23 条

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